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Search for "strain sensors" in Full Text gives 12 result(s) in Beilstein Journal of Nanotechnology.

On the mechanism of piezoresistance in nanocrystalline graphite

  • Sandeep Kumar,
  • Simone Dehm and
  • Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

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  • , Technische Universität Darmstadt, 64287 Darmstadt, Germany 10.3762/bjnano.15.34 Abstract Strain sensors are sensitive to mechanical deformations and enable the detection of strain also within integrated electronics. For flexible displays, the use of a seamlessly integrated strain sensor would be beneficial
  • transparent strain sensors. So far, the growth of specific grain boundaries in graphene has not been reported. Also, most research activities aim at the chemical vapor deposition (CVD) synthesis of monocrystalline graphene free of grain boundaries [10][11][12]. Methods to detect and visualize grain boundaries
  • values. For larger strains, mechanisms such as grain rotation and the formation of nanocracks might contribute to the piezoresistive behavior in nanocrystalline graphene. Keywords: grain boundary; nanocrystalline graphene; strain sensor; Raman; tunneling and destruction; Introduction Flexible strain
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Published 08 Apr 2024

Ultrasensitive and ultrastretchable metal crack strain sensor based on helical polydimethylsiloxane

  • Shangbi Chen,
  • Dewen Liu,
  • Weiwei Chen,
  • Huajiang Chen,
  • Jiawei Li and
  • Jinfang Wang

Beilstein J. Nanotechnol. 2024, 15, 270–278, doi:10.3762/bjnano.15.25

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  • durability. These impressive attributes are attributed to the deliberate design of geometric structures and careful selection of connection types for the sensing materials, thereby presenting a novel approach to fabricating stretchable and highly sensitive crack-strain sensors. This work offers a universal
  • platform for constructing strain sensors with both high sensitivity and stretchability, showing a far-reaching significance and influence for developing next-generation practically applicable soft electronics. Keywords: crack sensors; helical structure; polydimethylsiloxane (PDMS); ultrahigh sensitivity
  • ], monitoring human health [6][7][8], medical treatment [9][10], soft robotics [11][12], and human–computer interaction [13][14][15]. Numerous flexible strain sensors employing various mechanisms such as piezoresistivity [16][17], capacitance [18][19], and piezoelectricity have been developed to fulfill the
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Published 01 Mar 2024

Piezoelectric nanogenerator for bio-mechanical strain measurement

  • Zafar Javed,
  • Lybah Rafiq,
  • Muhammad Anwaar Nazeer,
  • Saqib Siddiqui,
  • Muhammad Babar Ramzan,
  • Muhammad Qamar Khan and
  • Muhammad Salman Naeem

Beilstein J. Nanotechnol. 2022, 13, 192–200, doi:10.3762/bjnano.13.14

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  • developed a resistive strain sensors for movement analysis. They integrated an electrically conductive elastomer into a fabric, which was then able to detect the posture and the movement of the human body. Retrieved data from these strain sensors were compared with conventional motion tracking systems. The
  • results show promising performance for body posture classification and reconstruction. Similarly, for measuring human body angles, piezoresistive sensors were developed and characterized under bending and stretching regarding the application as strain sensors [7]. Knitted piezoresistive fabrics were used
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Published 07 Feb 2022

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

  • Jianqi Dong,
  • Liang Chen,
  • Yuqing Yang and
  • Xingfu Wang

Beilstein J. Nanotechnol. 2020, 11, 1847–1853, doi:10.3762/bjnano.11.166

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  • effect; strain sensors; strain tests; top-down method; Introduction Due to the non-centrosymmetric structure of the group-III nitride semiconductor materials (e.g., GaN, AlN, and AlGaN), spontaneous polarization (Psp) and piezoelectric polarization induced by lattice mismatch (Plm) are inevitably
  • based on the 1D quantum confinement effect. Hence, the unique electrical and optical properties of 1D semiconductor NWs have attracted research interest from the field of nanogenerators [11][12][13][14] and NW-based strain sensors [15][16][17][18][19]. Strain sensors can convert mechanical deformation
  • , AlGaN/AlN/GaN NWs with high electron mobility, carrier density, and mechanical flexibility have become good candidates for highly sensitive and flexible strain sensors. In this work, we use a top-down two-step process, including inductively coupled plasma (ICP) dry etching and selective electrochemical
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Published 10 Dec 2020

Wearable, stable, highly sensitive hydrogel–graphene strain sensors

  • Jian Lv,
  • Chuncai Kong,
  • Chao Yang,
  • Lu Yin,
  • Itthipon Jeerapan,
  • Fangzhao Pu,
  • Xiaojing Zhang,
  • Sen Yang and
  • Zhimao Yang

Beilstein J. Nanotechnol. 2019, 10, 475–480, doi:10.3762/bjnano.10.47

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  • the field of bioelectronics, artificial intelligence, and soft robotics [1][2]. Among these sensors, strain sensors can translate an external applied tensile force into electrical signal, hence attracting numerous research efforts for health monitoring, biomechanics studies and artificial skin for
  • soft robotics [3][4]. The current, state of the art strategy to fabricate flexible strain sensors involves the integration of a conductive film on an elastomeric polymer and the embedding of conductive materials into the polymer matrix [5][6]. However, the lack of seamless conformation to curvatures in
  • hydrogel-based strain sensors demonstrating high flexibility, self-healing properties and skin-attachable wearability, have been fabricated in the reported literature [2][10][11]. However, their inability to retain water over a long period largely prevents the hydrogel-based strain sensors from being
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Published 14 Feb 2019

Al2O3/TiO2 inverse opals from electrosprayed self-assembled templates

  • Arnau Coll,
  • Sandra Bermejo,
  • David Hernández and
  • Luís Castañer

Beilstein J. Nanotechnol. 2018, 9, 216–223, doi:10.3762/bjnano.9.23

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  • several optoelectronic devices such as dichroic mirrors, optical switches, lasers, biosensors or strain sensors [1][2][3][4][5]. The performance of these devices is mainly related to the lattice periodicity, the quality and the size of the ordered structure and the refractive index contrast. The
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Published 19 Jan 2018

Flexible photonic crystal membranes with nanoparticle high refractive index layers

  • Torben Karrock,
  • Moritz Paulsen and
  • Martina Gerken

Beilstein J. Nanotechnol. 2017, 8, 203–209, doi:10.3762/bjnano.8.22

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  • molecule trapping [6], and surface emitting lasers [7]. Recently, flexible photonic crystal structures with elastomers as substrates have been investigated as strain sensors [8], for enhanced light out-coupling in flexible organic light emitting diodes [9][10], for photonic paper [11], and for pressure
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Published 20 Jan 2017

Graphene–polymer coating for the realization of strain sensors

  • Carmela Bonavolontà,
  • Carla Aramo,
  • Massimo Valentino,
  • Giampiero Pepe,
  • Sergio De Nicola,
  • Gianfranco Carotenuto,
  • Angela Longo,
  • Mariano Palomba,
  • Simone Boccardi and
  • Carosena Meola

Beilstein J. Nanotechnol. 2017, 8, 21–27, doi:10.3762/bjnano.8.3

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Published 03 Jan 2017

Formation of pure Cu nanocrystals upon post-growth annealing of Cu–C material obtained from focused electron beam induced deposition: comparison of different methods

  • Aleksandra Szkudlarek,
  • Alfredo Rodrigues Vaz,
  • Yucheng Zhang,
  • Andrzej Rudkowski,
  • Czesław Kapusta,
  • Rolf Erni,
  • Stanislav Moshkalev and
  • Ivo Utke

Beilstein J. Nanotechnol. 2015, 6, 1508–1517, doi:10.3762/bjnano.6.156

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  • controlling the beam scanning three dimensional structures of a complex shape can be created in a single direct-write deposition step onto planar or non-planar surfaces [2]. Nanodevices with various functionalities have been deposited comprising gas sensors [3][4], magnetic sensors [5][6] strain sensors [7
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Published 13 Jul 2015

Tunable magnetism on the lateral mesoscale by post-processing of Co/Pt heterostructures

  • Oleksandr V. Dobrovolskiy,
  • Maksym Kompaniiets,
  • Roland Sachser,
  • Fabrizio Porrati,
  • Christian Gspan,
  • Harald Plank and
  • Michael Huth

Beilstein J. Nanotechnol. 2015, 6, 1082–1090, doi:10.3762/bjnano.6.109

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  • photomask repair [20] to fabrication of nanowires [17][21], nanopores [22], magnetic [5][12] and strain sensors [23] as well as direct-write superconductors [24]. The precursors Co2(CO)8 and (CH3)3CH3PtC5H4 from which Pt- an Co-based structures can be fabricated in the FEBID process, like most metal-organic
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Published 29 Apr 2015

A scanning probe microscope for magnetoresistive cantilevers utilizing a nested scanner design for large-area scans

  • Tobias Meier,
  • Alexander Förste,
  • Ali Tavassolizadeh,
  • Karsten Rott,
  • Dirk Meyners,
  • Roland Gröger,
  • Günter Reiss,
  • Eckhard Quandt,
  • Thomas Schimmel and
  • Hendrik Hölscher

Beilstein J. Nanotechnol. 2015, 6, 451–461, doi:10.3762/bjnano.6.46

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  • read-out. Magnetic sensors [32][33][34], especially strain sensors based on tunneling magnetoresistive (TMR) junctions [35] had recently shown an enhanced sensitivity compared to piezoresistive sensors [36][37][38][39][40] and are promising candidates for strain sensors incorporated into AFM
  • and set their sensitivity at maximum for imaging atomic step edges. Setup of a nonmagnetic large scan range AFM In order to characterize magnetoresistive strain sensors integrated into AFM cantilevers, the deflection of the cantilever has to be measured in parallel by independent means. Therefore, our
  • requirement for reliable quantitative large scale AFM measurements. Magnetoresistive strain sensors Driven by the increasing demand for magnetic hard disk drives [42], magnetic tunneling junctions (MTJ) [43][44][45][46][47][48][49][50] are state-of-the-art read-heads in magnetic hard drives. Additionally
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Published 13 Feb 2015

Focused electron beam induced deposition: A perspective

  • Michael Huth,
  • Fabrizio Porrati,
  • Christian Schwalb,
  • Marcel Winhold,
  • Roland Sachser,
  • Maja Dukic,
  • Jonathan Adams and
  • Georg Fantner

Beilstein J. Nanotechnol. 2012, 3, 597–619, doi:10.3762/bjnano.3.70

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Published 29 Aug 2012
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